dm n1008 ufd f d atasheet number: d s 38322 rev. 2 - 2 1 of 7 www.diodes.com october 2017 ? diodes incorporated dm n1008 uf d f advanced information 12v n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t a = +25c 12 v 8 m? @ v gs = 4.5v 12.2a 1 2.5 m? gs = 2.5 v 10.4 a description this mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. applications ? ? ? features ? C ? 2 ? ? ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? ? case material: molded plastic, green molding ? ? C ? ordering information (note 4 ) part number reel s ize (inches) case quantity per r eel dm n1008 ufd f - 7 7 u - dfn2020 - 6 (type f) 3,000 dm n1008 ufd f - 13 13 u - dfn2020 - 6 (type f) 10 ,000 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (< 1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com /products/packages.html . marking information date code key year 201 7 201 8 201 9 20 20 20 21 20 2 2 2023 202 4 code e f g h i j k l month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d pin out internal schematic 8n = product type marking code ym = date code marking y = year (ex: e = 201 7 ) m = month (ex: 9 = september) u - dfn2020 - 6 (type f) bottom view bottom view top view 8n y m d s g e4
dm n1008 ufd f d atasheet number: d s 38322 rev. 2 - 2 2 of 7 www.diodes.com october 2017 ? diodes incorporated dm n1008 uf d f advanced information maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 12 v gate - source voltage v gss 8 v continuous drain current , v gs = 4.5 v (note 6 ) steady state t a = + 25c t a = + 70c i d 1 2.2 9. 8 a pulsed drain curren t ( 38 0 dm 60 a continuous source - drain diode current (note 6 ) t a = + 25c i s 1.8 a avalanche current , l = 0.1mh (note 7) i a s 16.4 a avalanche energy , l = 0.1mh (note 7) e a s 13.5 mj thermal characteristics characteristic symbol value unit total power dissipation (note 5 ) t a = +25c p d 0. 7 w t a = +70c 0. 4 thermal resistance, junction to ambient (note 5 ) s teady state r ja 16 8 c/w total power dissipation (note 6 ) t a = +25c p d 1.7 w t a = +70c 1.0 thermal resistance, junction to ambient (note 6 ) s teady state r ja 74 c/w thermal resistance, junction to case (note 6 ) r j c 12 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics ( note 8 ) drain - source breakdown voltage bv dss 12 gs = 0v, i d = 250 a j = + 25c i dss ds = 9.6 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics ( note 8 ) gate threshold voltage v gs (th) 0. 3 ds = v gs , i d = 250 a ds (on) ? gs = 4. 5 v, i d = 5 a 7.6 11 v gs = 3.0 v, i d = 5a 8.5 1 2.5 v gs = 2.5 v, i d = 5a diode forward voltage v sd gs = 0v, i s = 5 a dynamic characteristic s (note 9 ) input capacitance c iss ds = 6 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ds = 6 v, i d = 5 a total gate charge ( v gs = 8 v ) q g gs gd d( on ) ds = 6 v, v g s = 4.5 v, r g = 2 d = 5 a turn - on rise time t r d( off ) f rr f = 5 a, di/dt = 2 00a/ rr f = 5 a, di/dt = 2 00a/ notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 . i a s and e a s rating s are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm n1008 ufd f d atasheet number: d s 38322 rev. 2 - 2 3 of 7 www.diodes.com october 2017 ? diodes incorporated dm n1008 uf d f advanced information 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) fig ure 1. typical output characteristic v gs = 1.0v v gs = 1.2v v gs = 1.5v v gs = 4.5v v gs = 3.0v v gs = 2.0v v gs = 2.5v 0.006 0.0065 0.007 0.0075 0.008 0.0085 0.009 0.0095 0.01 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 3.0v v gs = 2.5v v gs = 4.5v 0 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 r ds(on) , drain - source on - resistance ( gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 5a 0.002 0.004 0.006 0.008 0.01 0.012 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature - 55 25 85 150 125 v gs = 4.5v 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = 4.5v, i d = 5a v gs = 3.0v, i d = 5a v gs = 2.5v, i d = 5a 0 2 4 6 8 10 12 14 16 18 20 0.3 0.5 0.7 0.9 1.1 1.3 1.5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5v - 55 25 85 125 150
dm n1008 ufd f d atasheet number: d s 38322 rev. 2 - 2 4 of 7 www.diodes.com october 2017 ? diodes incorporated dm n1008 uf d f advanced information 0.004 0.006 0.008 0.01 0.012 0.014 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( j , junction temperature ( gs = 4.5v, i d = 5a v gs = 3.0v, i d = 5a v gs = 2.5v, i d = 5a 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t j = 125 o c t j = 85 o c t j = 25 o c t j = - 55 o c v gs = 0v t j = 150 o c 100 1000 10000 0 2 4 6 8 10 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 0 5 10 15 20 25 v gs (v) q g (nc) figure 11. gate charge v ds = 6v, i d = 5a 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area p w =10s p w =10ms p w =100 s dc r ds(on) limited p w =1ms p w =100ms t j(max) = 150 t c = 25 single pulse dut on 1*mrp board v gs = 4.5v p w =1s 0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 a i d = 1ma
dm n1008 ufd f d atasheet number: d s 38322 rev. 2 - 2 5 of 7 www.diodes.com october 2017 ? diodes incorporated dm n1008 uf d f advanced information 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r ja (t) = r(t) * r ja r ja = 167
dm n1008 ufd f d atasheet number: d s 38322 rev. 2 - 2 6 of 7 www.diodes.com october 2017 ? diodes incorporated dm n1008 uf d f advanced information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. u - dfn2020 - 6 (type f) u - dfn2020 - 6 (type f) dim min max typ a 0.57 ? ? a1 0.00 0.05 0.03 a3 - - 0.15 b 0.25 0.35 0.30 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 d2a 0.33 0.43 0.38 e 1.95 2.05 2.00 e2 1.05 1.25 1.15 e2a 0.65 0.75 0.70 e 0.65 bsc e2 0.863 bsc e3 0.70 bsc e4 0.325 bsc k 0.37 bsc k1 0.15 bsc k2 0.36 bsc l 0.225 0.325 0.275 z 0.20 bsc z1 0.110 bsc z2 0.20 bsc all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. u - dfn2020 - 6 (type f) dimensions value (in mm) c 0.650 x 0.400 x1 0.480 x2 0.950 x3 1.700 y 0.425 y1 0.800 y2 1.150 y3 1.450 y4 2.300 d d2 e e b l e2 a a3 seating plane a1 z(4x) e2 e2a d2a z1 e3 e4 k2 k k1 z2 pin1 y4 y2 y x c x3 y1 x1 x2 y3
dm n1008 ufd f d atasheet number: d s 38322 rev. 2 - 2 7 of 7 www.diodes.com october 2017 ? diodes incorporated dm n1008 uf d f advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or fore ign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorp orated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safe ty - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes in corporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes.com
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